DIN Standards Committee Materials Testing
DIN 51456
Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
Prüfung von Materialien für die Halbleitertechnologie - Oberflächenanalyse von Silicium-Halbleiterscheiben (Wafer) durch Multielementbestimmung in wässrigen Analysenlösungen mittels Massenspektrometrie mit induktiv gekoppeltem Plasma (ICP-MS)
Overview
This document specifies a method for the determination of the mass fractions of the elements Al (aluminium), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper), Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesia), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead), Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) in the trace range on the surface of a silicon wafer, using mass spectrometry with inductively coupled plasma (ICP-MS) as method of determination. The method is valid for mass fractions of trace elements between 10 ng/kg up to 10 000 ng/kg (m/m) in the scanning solution. This document is only valid for silicon wafers the surface of which consists of a layer decomposable by hydrogen fluoride. This document has been prepared by Working Committee NA 062-02-21 AA "Prüfung von Prozesschemikalien für die Halbleitertechnologie" ("Testing of process materials for semiconductor technology") at the Materials Testing Standards Committee (NMP) at DIN.
Document: references other documents
Responsible national committee
NA 062-02-21 AA - Testing of process materials for semiconductor technology
