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NA 022

DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE

About DKE Projects Drafts Publications Documents withdrawn without replacement National committees European committees International committees

Standards [CURRENT]

IEC 60747-8-1 ; QC 750112:1987
Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.

Title (German)

Halbleiterbauelemente - Diskrete Bauelemente und integrierte Schaltkreise; Teil 8: Feldeffekttransistoren. Bauartspezifikation für Einzeltorfeldeffekttransistoren bis zu 5 W und 1GHz

Edition 1987

Original language English , French

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DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE

IEC 60747-8-1 ; QC 750112:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.

IEC 60747-8-1 ; QC 750112:1987
Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.