DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
Semiconductor devices - Neuromorphic devices - Part 2: Evaluation method of linearity in memristor devices (IEC 47/2942/CDV:2025); German and English version prEN IEC 63550-2:2025
Abstract
This part of IEC 63550-2 specifies the test methods for evaluating the linearity of neuromorphic memristor devices. The test methods in this international standard include long term potentiation (LTP), long term depression (LTD), endurance and retention of LTD/LTP, and linearity. This document is applicable to neuromorphic 2-teminal memristor devices without any limitations prone to device technology and size.
Begin
2025-07-23
Planned document number
DIN EN IEC 63550-2
Project number
02233314
Responsible national committee
DKE/K 631 - Halbleiterbauelemente
draft standard
Semiconductor devices - Neuromorphic devices - Part 2: Evaluation method of linearity in memristor devices (IEC 47/2942/CDV:2025); German and English version prEN IEC 63550-2:2025
2026-05
Order from DIN Media
