DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
Semiconductor devices - Neuromorphic devices - Part 3: Evaluation method of spike dependent plasticity in memristor devices (IEC 47/2941/CDV:2025); German and English version prEN IEC 63550-3:2025
Abstract
This part of IEC 63550-3 specifies the test methods for evaluating the spike-dependent plasticity of neuromorphic memristor devices. The test methods described in this international standard include spike time dependent plasticity (STDP), indirect STDP, spike rate dependent plasticity (SRDP), and their retention properties. This document may be applicable to neuromorphic memristor devices without restrictions in terms of device technology and size.
Begin
2025-07-23
Planned document number
DIN EN IEC 63550-3
Project number
02233312
Responsible national committee
DKE/K 631 - Halbleiterbauelemente
draft standard
Semiconductor devices - Neuromorphic devices - Part 3: Evaluation method of spike dependent plasticity in memristor devices (IEC 47/2941/CDV:2025); German and English version prEN IEC 63550-3:2025
2026-05
Order from DIN Media
