Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
Abstract
This document specifies a method for the determination of the amount of oxygen in the gases according to this standard. This document covers a proportion determination between 1 µmol/mol and 10 µmol/mol and is applicable for the analysis of the residual oxygen content in the gases nitrogen, argon, helium, neon and hydrogen.
Begin
2025-02-03
Planned document number
DIN 50450-2
Project number
06236881
Responsible national committee
NA 062-05-73 AA - Gas analysis and gas quality
draft standard
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
2025-07
Order from DIN Media