Abstract

This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.

Begin

2024-10-09

Planned document number

DIN EN IEC 60749-23

Project number

02232624

Responsible national committee

DKE/K 631 - Halbleiterbauelemente  

draft standard

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 47/2881/CDV:2024); German and English version prEN IEC 60749-23:2024
2025-10
Order from DIN Media

previous edition(s)

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004 + A1:2011); German version EN 60749-23:2004 + A1:2011
2011-07

Order from DIN Media