NA 022
DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
DIN EN 60749-23 [CURRENT] references following documents:
| Document number | Edition | Title |
|---|---|---|
| IEC 60747-16-4 AMD 1 | 2009-03 | Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches; Amendment 1 More |
| IEC 60747-16-4 Edition 1.1 | 2011-04 | Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches More |
| IEC 60747-2-2 ; QC 750109:1993-09 | 1993-09 | Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A More |
| IEC 60747-4 | 2007-08 | Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors More |
| IEC 60747-5-1 | 1997-08 | Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices - General More |
| IEC 60747-5-1 Edition 1.2 | 2002-05 | Discrete semiconductor devices and integrated circuits - Part 5-1: Optoelectronic devices; General More |
| IEC 60747-5-2 | 1997-09 | Discrete semiconductor devices and integrated circuits - Part 5-2: Optoelectronic devices - Essential ratings and characteristics More |
| IEC 60747-5-3 | 1997-08 | Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods More |
| IEC 60747-6-3 ; QC 750113:1993-11 | 1993-11 | Semiconductor devices; discrete devices; part 6: thyristors: section 3: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A More |
| IEC 60747-7 | 2010-12 | Semiconductor devices - Discrete devices - Part 7: Bipolar transistors More |
