NA 022
DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
Project
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
Abstract
This part of IEC 62373 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
Begin
2026-03-06
Planned document number
DIN EN IEC 62373
Project number
02233757
