DKE German Commission for Electrical, Electronic & Information Technologies of DIN and VDE
Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
Abstract
This part of IEC 60749 specifies both the I test method and the overvoltage test method with regard to latch-up stress on integrated circuits. This test method is to be considered destructive. The purpose of this test method is to establish a procedure for determining the latch-up characteristics of integrated circuits (ICs) and to define latch-up failure criteria. Latch-up parameters are used both to determine product reliability and to minimise NTF and EOS faults (NTF, no trouble found; EOS, electrical overstress) resulting from latch-up processes. This test method is primarily applicable to CMOS devices. Its applicability to other technologies must be determined separately. The classification of latch-up stress as a function of temperature is specified in 2.1, and the failure and failure criteria (test levels) are specified in 2.10.
Begin
2025-11-13
Planned document number
DIN EN IEC 60749-29
Project number
02233502
