Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Edition 2019-11-22

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters (IEC 62751-2:2014 + A1:2019); German version EN 62751-2:2014 + A1:2019
Edition 2020-12

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters (IEC 62751-2:2014 + A1:2019 + AMD2:2023); German version EN 62751-2:2014 + A1:2019 + A2:2023
Edition 2024-07

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters (IEC 22F/689/CD:2022); Text in German and English
Edition 2023-02

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters (german version)
Edition 2021-01-01

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems – Part 2: Modular multilevel converters
Edition 2019-10

Power losses in voltage sourced converter (VSC) valves for high-voltage direct current (HVDC) systems - Part 2: Modular multilevel converters
Edition 2014-10

ELECTRONIC COMPONENTS. BIPOLAR TRANSISTORS FOR SWITCHING APPLICATIONS. COLLECTION OF DETAIL SPECIFICATION WITHIN THE SCOPE OF THE FRENCH STANDARDS NF C 86-010 AND NF C 86-614
Edition 1978-11-06

Terminal markings for valve device stacks and assemblies and for power conversion equipment (IEC 61148:2011); German version EN 61148:2012
Edition 2012-04

Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method)
Edition 2004-06