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DIN 50162
Testing of clad steels; determination of shear strength between cladding metal and parent metal in shear test
Edition
1978-09
DIN 50280
Running Test on Radial Plain Bearings; General
Edition
1975-10
DIN 50282
Plain bearings - Tribological behaviour of metallic antifriction materials - Significant terms
Edition
2019-06
DIN 50450-2
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
Edition
2025-07
DIN 50450-2
Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N₂, Ar, He, Ne and H₂ by using a galvanic cell
Edition
1991-03
DIN 50450-9
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C₁-C₃-hydrocarbons in gaseous hydrogen chloride by gaschromatography
Edition
2021-07
DIN 50451-3
Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
Edition
2014-11
DIN 50451-4
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)
Edition
2024-09
DIN 50451-5
Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of trace elements in the range of micrograms per kilogram and nanograms per kilogram
Edition
2022-08
DIN 50451-6
Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6: Determination of 36 elements in a high-purity ammonium fluoride solution (NH₄F) and in etching mixtures of high-purity ammonium fluoride solution containing hydrofluoric acid
Edition
2014-11